IPD03N03LB G

Type IPD03N03LB G OptiMOS®2 Power-Transistor IPS03N03LB G Product Summary Package Marking • Qualified according to JEDEC1) for target applications V DS 30 V R DS(on),max 3.3 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Type IPD03N03LB G IPS03N03LB G Package PG-TO252-3-11 PG-TO251-3-11 Marking 03N03LB 03N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 90 T C=100 °C 90 Pulsed drain current I D,pulse T C=25 °C3) 360 Avalanche energy, single pulse E AS I D=90 A, R GS=25 Ω 240 Reverse diode dv /dt dv /dt I D=90 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate source voltage4) V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.7 Unit A mJ kV/µs ±20 V 115 W -55 ... 175 °C 55/175/56 page 1 2008-04-11 IPD03N03LB G Parameter IPS03N03LB G Values Symbol Conditions Unit min. typ. max. - - 1.3 minimal footprint - - 75 6 cm2 cooling area5) - - 50 30 - - Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=70 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=60 A - 4.1 5.1 mΩ V GS=4.5 V, I D=60 A, SMD version - 3.9 4.9 V GS=10 V, I D=60 A - 3.0 3.5 V GS=10 V, I D=60 A, SMD version - 2.8 3.3 - 1.3 - Ω 60 120 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=60 A 1) J-STD20 and JESD22 1) Current is limited by bondwire; with an R thJC=1.3 K/W the chip is able to carry 142 A. 3) See figure 3 4) T j,max=150 °C and duty cycle D